Current Issue : October - December Volume : 2013 Issue Number : 4 Articles : 5 Articles
We demonstrate improved device performance by applying oxide sidewall spacer technology to a block-oxide-enclosed Si body to\r\ncreate a fully depleted silicon-on-insulator (FDSOI) nMOSFET, which overcomes the need for a uniformultrathin silicon film. The\r\npresence of block-oxide along the sidewalls of the Si body significantly reduces the influence of drain bias over the channel. The\r\nproposed FDSOI structure therefore outperforms conventional FDSOI with regard to its drain-induced barrier lowering (DIBL),\r\non/off current ratio, subthreshold swing, and threshold voltage rolloff.Thenew FDSOI structure is in fact shown to behave similarly\r\nto an ultrathin body (UTB) SOI but without the associated disadvantages and technological challenges of the ultrathin film, because\r\na thick Si body allows for reduced sensitivity to self-heating, thereby improving thermal stability....
Blindness is a state of lacking the visual perception due to physiological or neurological factors. The partial blindness represents the\r\nlack of integration in the growth of the optic nerve or visual centre of the eye, and total blindness is the full absence of the visual light\r\nperception. In this work, a simple, cheap, friendly user, smart blind guidance system is designed and implemented to improve the\r\nmobility of both blind and visually impaired people in a specific area. The proposed work includes a wearable equipment consists of\r\nhead hat and mini hand stick to help the blind person to navigate alone safely and to avoid any obstacles that may be encountered,\r\nwhether fixed or mobile, to prevent any possible accident. The main component of this system is the infrared sensor which is used\r\nto scan a predetermined area around blind by emitting-reflecting waves. The reflected signals received from the barrier objects\r\nare used as inputs to PIC microcontroller.The microcontroller is then used to determine the direction and distance of the objects\r\naround the blind. It also controls the peripheral components that alert the user about obstacle�s shape, material, and direction.The\r\nimplemented system is cheap, fast, and easy to use and an innovative affordable solution to blind and visually impaired people in\r\nthird world countries....
This paper presents the design of ladder-type filters based on film bulk acoustic wave resonator (FBAR) in Ku-band.The proposed\r\nFBAR filter has an insertion loss of -3 dB, out-of-band rejection of -12 dB and 3 dB bandwidth of 1.0GHz from 15GHz to 16GHz.\r\nBased on the characteristics of the FBAR filter, the expected characteristics of FBAR resonators are determined by using the 1D\r\nnumerical analysis. This design proves that it is possible to design a wide-bandwidth FBAR filter in Ku-band....
Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) are well suited for circuit applications that require moderate device\r\nperformance and low-temperature CMOS-compatible processing below 250�°C. Basic logic gate circuits fabricated using ambipolar\r\nnc-Si TFTs alone are presented and shown to operatewith correct outputs at frequencies of up to 100 kHz. Ring oscillators consisting\r\nof nc-Si TFT-based inverters are also shown to operate at above 20 kHz with a supply voltage of 5V, corresponding to a propagation\r\ndelay of <10 ??s/stage. These are the fastest circuits formed out of nanocrystalline silicon TFTs to date. The effect of bias stress\r\ndegradation of TFTs on oscillation frequency is also explored, and relatively stable operation is shown with supply voltages >5V\r\nfor several hours....
Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness\r\nof 46nm and lower than 5 nm, respectively, were fabricated using a selective ââ?¬Å?gate-recessedââ?¬Â process on the same silicon wafer.\r\nTheir current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of\r\nmagnitude.We analyzed this result by considering the severemobility degradation and the influence of a huge series resistance and\r\nfound that the last one seemsmore coherent. Then the electrical characteristics of theNSB can be analytically derived by integrating\r\na gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance\r\nis reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation\r\ncurrent with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other\r\nnanodevices in which series resistance and/or mobility degradation is of a great concern....
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